| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
P6KE180A |
154.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1682 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1683 |
P6KE180CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1684 |
P6KE18A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1685 |
P6KE20 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1686 |
P6KE200 |
162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1687 |
P6KE200A |
171.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1688 |
P6KE200C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 180 V, Vbr(max) = 220 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1689 |
P6KE200CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1690 |
P6KE20A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1691 |
P6KE22 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1692 |
P6KE220 |
175.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1693 |
P6KE220A |
185.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1694 |
P6KE220C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1695 |
P6KE220CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 209 V, Vbr(max) = 231 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1696 |
P6KE22A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1697 |
P6KE24 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1698 |
P6KE24A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1699 |
P6KE250 |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1700 |
P6KE250A |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1701 |
P6KE250C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 225 V, Vbr(max) = 275 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1702 |
P6KE250CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1703 |
P6KE27 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1704 |
P6KE27A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1705 |
P6KE30 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1706 |
P6KE300 |
243.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1707 |
P6KE300A |
256.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1708 |
P6KE300C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 270 V, Vbr(max) = 330 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1709 |
P6KE300CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 285 V, Vbr(max) = 315 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1710 |
P6KE30A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
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