No. |
Part Name |
Description |
Manufacturer |
1651 |
2N3904 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
1652 |
2N3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
1653 |
2N3904 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
1654 |
2N3905 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1655 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
1656 |
2N3905 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
1657 |
2N3905 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
1658 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1659 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
1660 |
2N3905 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
1661 |
2N3906 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1662 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
1663 |
2N3906 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
1664 |
2N3906 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
1665 |
2N3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
1666 |
2N3906 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
1667 |
2N3924 |
Silicon Planar Epitaxial Overlay Transistor |
Philips |
1668 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
1669 |
2N3926 |
Silicon Planar Epitaxial Overlay Transistor |
Philips |
1670 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
1671 |
2N3927 |
Silicon Planar Epitaxial Overlay Transistor |
Philips |
1672 |
2N3927 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
1673 |
2N4013 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
1674 |
2N4014 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
1675 |
2N4033 |
Silicon PNP Epitaxial Planar Transistor |
AEG-TELEFUNKEN |
1676 |
2N4036 |
Silicon PNP Epitaxial Planar Transistor |
AEG-TELEFUNKEN |
1677 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
1678 |
2N4123 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
1679 |
2N4123 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1680 |
2N4123 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
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