No. |
Part Name |
Description |
Manufacturer |
1681 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
1682 |
2N4124 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
1683 |
2N4124 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1684 |
2N4124 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
1685 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
1686 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1687 |
2N4125 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
1688 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
1689 |
2N4126 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1690 |
2N4126 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
1691 |
2N4347 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
1692 |
2N4347 |
Silicon HOMETAXIAL NPN transistor, high voltage amplifier |
SGS-ATES |
1693 |
2N4348 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
1694 |
2N4400 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1695 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
1696 |
2N4400 |
NPN Epitaxial Silicon Transistor |
Honey Technology |
1697 |
2N4400 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
1698 |
2N4400 |
NPN EXPITAXIAL SILICON TRANSISTOR |
Semtech |
1699 |
2N4400 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
1700 |
2N4401 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1701 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
1702 |
2N4401 |
NPN Epitaxial Silicon Transistor |
Honey Technology |
1703 |
2N4401 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
1704 |
2N4401 |
NPN EXPITAXIAL SILICON TRANSISTOR |
Semtech |
1705 |
2N4401 |
Silicon NPN epitaxial planar transistor (PCT Process) |
TOSHIBA |
1706 |
2N4401SC |
EPITAXIAL PLANAR NPN TRANSISTOR |
Korea Electronics (KEC) |
1707 |
2N4402 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1708 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
1709 |
2N4402 |
PNP Epitaxial Silicon Transistor |
Honey Technology |
1710 |
2N4402 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
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