No. |
Part Name |
Description |
Manufacturer |
1741 |
2N4922 |
NPN Epitaxial Power Transistor |
National Semiconductor |
1742 |
2N4923 |
NPN SILICON EPITAXIAL TRANSISTOR |
Boca Semiconductor Corporation |
1743 |
2N4923 |
NPN Epitaxial Power Transistor |
National Semiconductor |
1744 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
1745 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
1746 |
2N4953 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1747 |
2N4957 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
1748 |
2N4958 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
1749 |
2N4959 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
1750 |
2N5010 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
1751 |
2N5014 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
1752 |
2N5038 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
1753 |
2N5039 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
1754 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1755 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1756 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
1757 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
1758 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
1759 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
1760 |
2N5190 |
NPN Epitaxial Power Transistor |
National Semiconductor |
1761 |
2N5191 |
NPN Epitaxial Power Transistor |
National Semiconductor |
1762 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
1763 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1764 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1765 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1766 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1767 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1768 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
1769 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
1770 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| | | |