| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
BD437-D |
Plastic Medium Power Silicon NPN Transistor |
ON Semiconductor |
| 1682 |
BD437T |
Plastic Medium Power Silicon NPN Transistor |
ON Semiconductor |
| 1683 |
BD438 |
Plastic Medium Power Silicon PNP Transistor |
Motorola |
| 1684 |
BD438 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 1685 |
BD438-D |
Plastic Medium Power Silicon PNP Transistor |
ON Semiconductor |
| 1686 |
BD439 |
Plastic medium power silicon NPN transistor. 4 A, 60 V. |
Motorola |
| 1687 |
BD439 |
Plastic Medium Power Silicon NPN Transistor |
ON Semiconductor |
| 1688 |
BD439 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 1689 |
BD440 |
Plastic Medium Power Silicon PNP Transistor |
Motorola |
| 1690 |
BD440 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 1691 |
BD441 |
Plastic Medium Power Silicon NPN Transistor |
Motorola |
| 1692 |
BD441 |
Plastic Medium Power Silicon NPN Transistor |
ON Semiconductor |
| 1693 |
BD441 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 1694 |
BD442 |
Plastic Medium Power Silicon PNP Transistor |
Motorola |
| 1695 |
BD442 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 1696 |
BD533 |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 1697 |
BD533 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 1698 |
BD533J |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 - 75 hFE. |
Continental Device India Limited |
| 1699 |
BD533K |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 1700 |
BD534 |
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 1701 |
BD534 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 1702 |
BD535 |
50.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 1703 |
BD535 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 1704 |
BD536 |
50.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 1705 |
BD536 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 1706 |
BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. |
Continental Device India Limited |
| 1707 |
BD537 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 1708 |
BD538 |
50.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. |
Continental Device India Limited |
| 1709 |
BD538 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 1710 |
BD561 |
4A medium power transistor NPN silicon 40V 40W |
Motorola |
| | | |
