| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
BDP32 |
PNP medium power transistor |
Philips |
| 1742 |
BDW23 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1743 |
BDW23A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1744 |
BDW23B |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1745 |
BDW23C |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1746 |
BDW24 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1747 |
BDW24A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1748 |
BDW24B |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1749 |
BDW24C |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1750 |
BDX70 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1751 |
BDX71 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 1752 |
BDX71 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1753 |
BDX72 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1754 |
BDX73 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 1755 |
BDX73 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1756 |
BDX74 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1757 |
BDX75 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 1758 |
BDX75 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1759 |
BDX77 |
Medium Power Switching and Amplifier Applications |
Continental Device India Limited |
| 1760 |
BF336 |
Silicon n-p-n medium power transistor |
Mullard |
| 1761 |
BF337 |
Silicon n-p-n medium power transistor |
Mullard |
| 1762 |
BF338 |
Silicon n-p-n medium power transistor |
Mullard |
| 1763 |
BF457 |
10.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1764 |
BF457 |
0.1A NPN planar silicon medium power transistor |
Motorola |
| 1765 |
BF458 |
10.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1766 |
BF458 |
0.1A NPN planar silicon medium power transistor |
Motorola |
| 1767 |
BF459 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1768 |
BF459 |
0.1A NPN planar silicon medium power transistor |
Motorola |
| 1769 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 1770 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
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