| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
BD562 |
4A medium power transistor PNP silicon 40V 40W |
Motorola |
| 1712 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1713 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1714 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1715 |
BD677A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1716 |
BD678 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1717 |
BD678A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1718 |
BD679 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1719 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1720 |
BD680 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1721 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1722 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1723 |
BD682 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1724 |
BD905 |
90.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1725 |
BD906 |
90.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1726 |
BD907 |
90.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1727 |
BD908 |
90.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1728 |
BD909 |
90.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1729 |
BD910 |
90.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1730 |
BD911 |
90.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1731 |
BD912 |
90.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1732 |
BD949 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1733 |
BD950 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1734 |
BD951 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1735 |
BD952 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1736 |
BD953 |
40.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1737 |
BD954 |
40.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1738 |
BD955 |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1739 |
BD956 |
40.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1740 |
BDP31 |
NPN medium power transistor |
Philips |
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