| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
1N5518D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1742 |
1N5518DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1743 |
1N5518DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1744 |
1N5519 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1745 |
1N5519 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1746 |
1N5519 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1747 |
1N5519 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1748 |
1N5519 |
Low Voltage Avalanche Zener |
Microsemi |
| 1749 |
1N5519 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±20% tolerance |
Motorola |
| 1750 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1751 |
1N5519A |
Low Voltage Avalanche Zener |
Microsemi |
| 1752 |
1N5519A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±10% tolerance |
Motorola |
| 1753 |
1N5519A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1754 |
1N5519A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1755 |
1N5519AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1756 |
1N5519AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1757 |
1N5519B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1758 |
1N5519B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1759 |
1N5519B |
Low Voltage Avalanche Zener |
Microsemi |
| 1760 |
1N5519B |
Low Voltage Avalanche Zener |
Microsemi |
| 1761 |
1N5519B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±5% tolerance |
Motorola |
| 1762 |
1N5519B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 1763 |
1N5519B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1764 |
1N5519B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1765 |
1N5519B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1766 |
1N5519BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1767 |
1N5519BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1768 |
1N5519C |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1769 |
1N5519C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1770 |
1N5519C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
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