| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
1N5520BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1802 |
1N5520C |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1803 |
1N5520C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1804 |
1N5520C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1805 |
1N5520CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1806 |
1N5520CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1807 |
1N5520D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1808 |
1N5520D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1809 |
1N5520D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1810 |
1N5520DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1811 |
1N5520DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1812 |
1N5521 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1813 |
1N5521 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1814 |
1N5521 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1815 |
1N5521 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1816 |
1N5521 |
Low Voltage Avalanche Zener |
Microsemi |
| 1817 |
1N5521 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±20% tolerance |
Motorola |
| 1818 |
1N5521A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1819 |
1N5521A |
Low Voltage Avalanche Zener |
Microsemi |
| 1820 |
1N5521A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±10% tolerance |
Motorola |
| 1821 |
1N5521A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1822 |
1N5521A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1823 |
1N5521AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1824 |
1N5521AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1825 |
1N5521B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1826 |
1N5521B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1827 |
1N5521B |
Low Voltage Avalanche Zener |
Microsemi |
| 1828 |
1N5521B |
Low Voltage Avalanche Zener |
Microsemi |
| 1829 |
1N5521B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±5% tolerance |
Motorola |
| 1830 |
1N5521B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
