| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
1N5521B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1832 |
1N5521B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1833 |
1N5521B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1834 |
1N5521BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1835 |
1N5521BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1836 |
1N5521C |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1837 |
1N5521C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1838 |
1N5521C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1839 |
1N5521CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1840 |
1N5521CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1841 |
1N5521D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 1842 |
1N5521D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1843 |
1N5521D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1844 |
1N5521DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1845 |
1N5521DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1846 |
1N5522 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1847 |
1N5522 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1848 |
1N5522 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1849 |
1N5522 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1850 |
1N5522 |
Low Voltage Avalanche Zener |
Microsemi |
| 1851 |
1N5522 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.7V ±20% tolerance |
Motorola |
| 1852 |
1N5522A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1853 |
1N5522A |
Low Voltage Avalanche Zener |
Microsemi |
| 1854 |
1N5522A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.7V ±10% tolerance |
Motorola |
| 1855 |
1N5522A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1856 |
1N5522A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1857 |
1N5522AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1858 |
1N5522AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1859 |
1N5522B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1860 |
1N5522B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
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