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Datasheets for -BASE

Datasheets found :: 4901
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2N6388 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
182 2N6428 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
183 2N6428A Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
184 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
185 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
186 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
187 2N6474 130 V, epitaxial-base NPN selicon versawatt transistor Boca Semiconductor Corporation
188 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
189 2N6475 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
190 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State
191 2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors Boca Semiconductor Corporation
192 2N6476 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. General Electric Solid State
193 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State
194 2N6487 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. General Electric Solid State
195 2N6488 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. General Electric Solid State
196 2N6489 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. General Electric Solid State
197 2N6490 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. General Electric Solid State
198 2N6491 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. General Electric Solid State
199 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
200 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
201 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
202 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
203 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
204 2N6520 High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
205 2N6609 Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. General Electric Solid State
206 2SA1015 Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. USHA India LTD
207 2SA1015 Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. USHA India LTD
208 2SA1625 High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. USHA India LTD
209 2SA1625 High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. USHA India LTD
210 2SA539 Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. USHA India LTD


Datasheets found :: 4901
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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