No. |
Part Name |
Description |
Manufacturer |
121 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
122 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
123 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
124 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
125 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
126 |
2N6291 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
127 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
128 |
2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
129 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
130 |
2N6293 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
131 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
132 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
133 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
134 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
135 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
136 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
137 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
138 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
139 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
140 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
141 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
142 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
143 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
144 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
145 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
146 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
147 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
148 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
149 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
150 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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