| No. |
Part Name |
Description |
Manufacturer |
| 1 |
12F629 |
8-Pin FLASH-Based 8-Bit CMOS Microcontrollers |
Microchip |
| 2 |
16C554 |
EPROM-Based 8-Bit CMOS Microcontroller |
Microchip |
| 3 |
16C62X |
EPROM-Based 8-Bit CMOS Microcontroller |
Microchip |
| 4 |
16F628 |
FLASH-Based 8-Bit CMOS Microcontrollers |
Microchip |
| 5 |
16F630 |
14-Pin FLASH-Based 8-Bit CMOS Microcontrollers |
Microchip |
| 6 |
16LF628A |
FLASH-Based 8-Bit CMOS Microcontrollers |
Microchip |
| 7 |
2N3713 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 8 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 9 |
2N3714 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 10 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 11 |
2N3715 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 12 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 13 |
2N3716 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 14 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 15 |
2N3740 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 16 |
2N3741 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 17 |
2N3789 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 18 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 19 |
2N3790 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 20 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 21 |
2N3791 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 22 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 23 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 24 |
2N3792 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 25 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 26 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 27 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 28 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 29 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 30 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
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