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Datasheets for -BASE

Datasheets found :: 4901
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 2N3791 Epitaxial-base transistor for linear and switching applications SGS-ATES
32 2N3792 100V Epitaxial-base NPN-PNP Comset Semiconductors
33 2N3792 Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. General Electric Solid State
34 2N3792 Silicon epitaxial-base PNP power transistor SGS-ATES
35 2N3792 Epitaxial-base transistor for linear and switching applications SGS-ATES
36 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
37 2N3904 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
38 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
39 2N3906 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
40 2N4123 General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
41 2N4124 General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
42 2N4125 Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
43 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
44 2N4400 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
45 2N4401 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
46 2N4402 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
47 2N4403 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
48 2N4901 PNP Power transistor Epitaxial-Base - LF amplifier and switching SESCOSEM
49 2N4902 PNP Power transistor Epitaxial-Base - LF amplifier and switching SESCOSEM
50 2N4903 PNP Power transistor Epitaxial-Base - LF amplifier and switching SESCOSEM
51 2N4904 PNP Power transistor Epitaxial-Base - LF amplifier and switching SESCOSEM
52 2N4905 PNP Power transistor Epitaxial-Base - LF amplifier and switching SESCOSEM
53 2N4906 PNP Power transistor Epitaxial-Base - LF amplifier and switching SESCOSEM
54 2N5086 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
55 2N5087 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
56 2N5088 Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
57 2N5089 Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
58 2N5190 Silicon epitaxial-base NPN medium power transistor SGS-ATES
59 2N5190 Epitaxial-base transistor for linear and switching applications SGS-ATES
60 2N5191 Silicon epitaxial-base NPN medium power transistor SGS-ATES


Datasheets found :: 4901
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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