DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for -BASE

Datasheets found :: 4901
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2N5191 Epitaxial-base transistor for linear and switching applications SGS-ATES
62 2N5192 Silicon epitaxial-base NPN medium power transistor SGS-ATES
63 2N5192 Epitaxial-base transistor for linear and switching applications SGS-ATES
64 2N5193 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
65 2N5193 Epitaxial-base transistor for linear and switching applications SGS-ATES
66 2N5194 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
67 2N5194 Epitaxial-base transistor for linear and switching applications SGS-ATES
68 2N5195 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
69 2N5195 Epitaxial-base transistor for linear and switching applications SGS-ATES
70 2N5210 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
71 2N5400 Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
72 2N5401 Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
73 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
74 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
75 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
76 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
77 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
78 2N5781 Silicon P-N-P epitaxial-base transistor. -80V, 10W. General Electric Solid State
79 2N5782 Silicon P-N-P epitaxial-base transistor. -65V, 10W. General Electric Solid State
80 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State
81 2N5784 Silicon N-P-N epitaxial-base transistor. 80V, 10W. General Electric Solid State
82 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
83 2N5786 Silicon N-P-N epitaxial-base transistor. 45V, 10W. General Electric Solid State
84 2N5875 Silicon epitaxial-base PNP power transistor SGS-ATES
85 2N5875 Epitaxial-base transistor for linear and switching applications SGS-ATES
86 2N5876 Silicon epitaxial-base PNP power transistor SGS-ATES
87 2N5876 Epitaxial-base transistor for linear and switching applications SGS-ATES
88 2N5877 Silicon epitaxial-base NPN power transistor SGS-ATES
89 2N5877 Epitaxial-base transistor for linear and switching applications SGS-ATES
90 2N5878 Silicon epitaxial-base NPN power transistor SGS-ATES


Datasheets found :: 4901
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



© 2024 - www Datasheet Catalog com