| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N1559 |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 182 |
2N1559A |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 183 |
2N1560 |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 184 |
2N1560A |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 185 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
| 186 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 187 |
2N1613 |
NPN silicon planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 188 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 189 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 190 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 191 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 192 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 193 |
2N1711 |
Silicon NPN Planar Transistor (in german) |
ITT Semiconductors |
| 194 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 195 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 196 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 197 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 198 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 199 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 200 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 201 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 202 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 203 |
2N1893 |
Silicon NPN Planar Transistor (in german) |
ITT Semiconductors |
| 204 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 205 |
2N1936 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 206 |
2N1937 |
Power transistor NPN Triple Diffused - Military applications |
SESCOSEM |
| 207 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 208 |
2N2075 |
PNP germanium power transistor for high-power applications in high-reliability equipment |
Motorola |
| 209 |
2N2075A |
PNP germanium power transistor for high-power applications in high-reliability equipment |
Motorola |
| 210 |
2N2076 |
PNP germanium power transistor for high-power applications in high-reliability equipment |
Motorola |
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