No. |
Part Name |
Description |
Manufacturer |
301 |
2N2331 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
302 |
2N2368 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
303 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
304 |
2N2369 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
305 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
306 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
307 |
2N2369A |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
308 |
2N2369A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
309 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
310 |
2N2483 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
311 |
2N2484 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
312 |
2N2484HR |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
313 |
2N2484HRG |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
314 |
2N2484HRT |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
315 |
2N2484UB1 |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
316 |
2N2484UBG |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
317 |
2N2484UBT |
Hi-Rel NPN bipolar transistor 60 V, 0.05 A |
ST Microelectronics |
318 |
2N2537 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
319 |
2N2538 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
320 |
2N2539 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
321 |
2N2540 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
322 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
323 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
324 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
325 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
326 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
327 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
328 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
329 |
2N2800 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
330 |
2N2801 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
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