| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N2221 |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 272 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 273 |
2N2221A |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 274 |
2N2221A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 275 |
2N2221A |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 276 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 277 |
2N2222 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 278 |
2N2222 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2907 PNP complementary |
Motorola |
| 279 |
2N2222 |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 280 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 281 |
2N2222A |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 282 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 283 |
2N2222A |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 284 |
2N2222AHR |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 285 |
2N2222AHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 286 |
2N2222AHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 287 |
2N2222ARHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 288 |
2N2222ARHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 289 |
2N2222ARUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 290 |
2N2222ARUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 291 |
2N2222AUB1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 292 |
2N2222AUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 293 |
2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 294 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 295 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 296 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 297 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 298 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 299 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 300 |
2N2330 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
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