| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
1N5627 |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1832 |
1N5627GP |
800 V, 3 A glass passivated junction rectifier |
Fagor |
| 1833 |
1N5627GP |
800 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
| 1834 |
1N5627GP |
GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 1835 |
1N5627GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 800V |
Vishay |
| 1836 |
1N5926B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1837 |
1N5926B |
11 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1838 |
1N5926B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1839 |
1N5927B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1840 |
1N5927B |
12 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1841 |
1N5927B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1842 |
1N5928B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1843 |
1N5928B |
13 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1844 |
1N5928B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1845 |
1N5929B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1846 |
1N5929B |
15 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1847 |
1N5929B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1848 |
1N5930B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1849 |
1N5930B |
16 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1850 |
1N5930B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1851 |
1N5931B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1852 |
1N5931B |
18 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1853 |
1N5931B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1854 |
1N5932B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1855 |
1N5932B |
20 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1856 |
1N5932B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1857 |
1N5933B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1858 |
1N5933B |
22 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1859 |
1N5933B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1860 |
1N5934B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
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