| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
1N5944B |
62 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1892 |
1N5944B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1893 |
1N5945B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1894 |
1N5945B |
68 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1895 |
1N5945B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1896 |
1N5946B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1897 |
1N5946B |
75 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1898 |
1N5946B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1899 |
1N5947B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1900 |
1N5947B |
82 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1901 |
1N5947B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1902 |
1N5948B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1903 |
1N5948B |
91 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1904 |
1N5948B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1905 |
1N5949B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1906 |
1N5949B |
100 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1907 |
1N5949B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1908 |
1N5950B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1909 |
1N5950B |
110 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1910 |
1N5950B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1911 |
1N5951B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1912 |
1N5951B |
120 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1913 |
1N5951B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1914 |
1N5952B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1915 |
1N5952B |
130 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1916 |
1N5952B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1917 |
1N5953B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1918 |
1N5953B |
150 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1919 |
1N5953B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1920 |
1N5954B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
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