| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
1N5934B |
24 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1862 |
1N5934B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1863 |
1N5935B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1864 |
1N5935B |
27 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1865 |
1N5935B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1866 |
1N5936B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1867 |
1N5936B |
30 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1868 |
1N5936B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1869 |
1N5937B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1870 |
1N5937B |
33 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1871 |
1N5937B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1872 |
1N5938B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1873 |
1N5938B |
36 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1874 |
1N5938B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1875 |
1N5939B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1876 |
1N5939B |
39 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1877 |
1N5939B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1878 |
1N5940B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1879 |
1N5940B |
43 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1880 |
1N5940B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1881 |
1N5941B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1882 |
1N5941B |
47 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1883 |
1N5941B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1884 |
1N5942B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1885 |
1N5942B |
51 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1886 |
1N5942B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1887 |
1N5943B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
| 1888 |
1N5943B |
56 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1889 |
1N5943B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 1890 |
1N5944B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts) |
Panjit International Inc |
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