No. |
Part Name |
Description |
Manufacturer |
1831 |
2N3658 |
35-A SILICON CONTROLLED RECTIFIERS |
General Electric Solid State |
1832 |
2N3658 |
35A Silicon Controlled Rectifier |
RCA Solid State |
1833 |
2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 150V. |
General Electric Solid State |
1834 |
2N3668 |
Silicon Controlled-Rectifier (SCRs) |
RCA Solid State |
1835 |
2N3669 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. |
General Electric Solid State |
1836 |
2N3669 |
Silicon Controlled-Rectifier (SCRs) |
RCA Solid State |
1837 |
2N3670 |
12.5A silicon controlled rectifier. Vrm(non-rep) 660V. |
General Electric Solid State |
1838 |
2N3670 |
Silicon Controlled-Rectifier (SCRs) |
RCA Solid State |
1839 |
2N3733 |
10W, 400-Mc Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
1840 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
1841 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
1842 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
1843 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
1844 |
2N3839 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
1845 |
2N3858 |
SILICON TRANSISTORS |
General Electric Solid State |
1846 |
2N3858-60 |
SILICON TRANSISTORS |
General Electric Solid State |
1847 |
2N3858A |
SILICON TRANSISTORS |
General Electric Solid State |
1848 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
1849 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
1850 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
1851 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
1852 |
2N3866 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
1853 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
1854 |
2N3870 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
1855 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
1856 |
2N3871 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
1857 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
1858 |
2N3872 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
1859 |
2N3873 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
1860 |
2N3873 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
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