No. |
Part Name |
Description |
Manufacturer |
1891 |
2N4314 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
1892 |
2N4347 |
High voltage silicon N-P-N transistor. 140V, 100W. |
General Electric Solid State |
1893 |
2N4348 |
HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS |
General Electric Solid State |
1894 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
1895 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
1896 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
1897 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
1898 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
1899 |
2N4427 |
Silicon NPN Overlay RF Transistor |
RCA Solid State |
1900 |
2N4440 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
1901 |
2N4870 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
1902 |
2N4871 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
1903 |
2N4898 |
Silicon P-N-P medium power transistor. 40V, 25W. |
General Electric Solid State |
1904 |
2N4899 |
Silicon P-N-P medium power transistor. 60V, 25W. |
General Electric Solid State |
1905 |
2N4900 |
Silicon P-N-P medium power transistor. 80V, 25W. |
General Electric Solid State |
1906 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
1907 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
1908 |
2N4987 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
1909 |
2N4988 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
1910 |
2N4989 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
1911 |
2N4990 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
1912 |
2N4991 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
1913 |
2N4992 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
1914 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
1915 |
2N5016 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
1916 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
1917 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
1918 |
2N5070 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
1919 |
2N5071 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
1920 |
2N5071 |
24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor |
RCA Solid State |
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