No. |
Part Name |
Description |
Manufacturer |
1981 |
2N5569 |
10A Silicon Triac |
RCA Solid State |
1982 |
2N5570 |
10A Silicon Triac |
RCA Solid State |
1983 |
2N5571 |
15A Silicon Triac |
RCA Solid State |
1984 |
2N5572 |
15A Silicon Triac |
RCA Solid State |
1985 |
2N5573 |
15A Silicon Triac |
RCA Solid State |
1986 |
2N5574 |
15A Silicon Triac |
RCA Solid State |
1987 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
1988 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
1989 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
1990 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
1991 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
1992 |
2N5754 |
2.5-A silicon triac. Voltage(typ) 100 V. |
General Electric Solid State |
1993 |
2N5754 |
2.5A Silicon Triacs |
RCA Solid State |
1994 |
2N5755 |
2.5-A silicon triac. Voltage(typ) 200 V. |
General Electric Solid State |
1995 |
2N5755 |
2.5A Silicon Triacs |
RCA Solid State |
1996 |
2N5756 |
2.5-A silicon triac. Voltage(typ) 400 V. |
General Electric Solid State |
1997 |
2N5756 |
2.5A Silicon Triacs |
RCA Solid State |
1998 |
2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. |
General Electric Solid State |
1999 |
2N5757 |
2.5A Silicon Triacs |
RCA Solid State |
2000 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
2001 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
2002 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
2003 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
2004 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
2005 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
2006 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
2007 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
2008 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
2009 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
2010 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
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