No. |
Part Name |
Description |
Manufacturer |
2101 |
2N6345A |
12-A silicon triac. 800 V. |
General Electric Solid State |
2102 |
2N6346A |
12-A silicon triac. 200 V. |
General Electric Solid State |
2103 |
2N6347A |
12-A silicon triac. 400 V. |
General Electric Solid State |
2104 |
2N6348A |
12-A silicon triac. 600 V. |
General Electric Solid State |
2105 |
2N6349A |
12-A silicon triac. 800 V. |
General Electric Solid State |
2106 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
2107 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
2108 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
2109 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
2110 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
2111 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
2112 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
2113 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
2114 |
2N6389 |
UHF/MATV Low-Noise Silicon NPN RF transistor |
RCA Solid State |
2115 |
2N6390 |
2-GHz, Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
2116 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
2117 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
2118 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
2119 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
2120 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
2121 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
2122 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
2123 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
2124 |
2N6400 |
16A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
2125 |
2N6401 |
16A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
2126 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
2127 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
2128 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
2129 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
2130 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
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