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Datasheets for SOL

Datasheets found :: 19264
Page: | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 | 73 |
No. Part Name Description Manufacturer
2041 2N6077 High-voltage, high-power silicon N-P-N transistor. General Electric Solid State
2042 2N6078 High-voltage, high-power silicon N-P-N transistor. General Electric Solid State
2043 2N6079 High-voltage, high-power silicon N-P-N transistor. General Electric Solid State
2044 2N6093 75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode RCA Solid State
2045 2N6104 Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note RCA Solid State
2046 2N6104 30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
2047 2N6105 60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note RCA Solid State
2048 2N6105 Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note RCA Solid State
2049 2N6105 Hotspotting in RF Power Transistors - Application Note RCA Solid State
2050 2N6105 30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
2051 2N6106 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
2052 2N6107 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
2053 2N6108 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
2054 2N6109 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
2055 2N6110 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
2056 2N6111 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
2057 2N6121 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. General Electric Solid State
2058 2N6122 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
2059 2N6123 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
2060 2N6124 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. General Electric Solid State
2061 2N6125 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
2062 2N6126 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
2063 2N6211 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
2064 2N6212 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
2065 2N6213 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
2066 2N6214 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
2067 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
2068 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
2069 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
2070 2N6249 300V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State


Datasheets found :: 19264
Page: | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 | 73 |



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