No. |
Part Name |
Description |
Manufacturer |
1921 |
2N5090 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
1922 |
2N5102 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
1923 |
2N5109 |
Silicon NPN Overlay RF Transistor |
RCA Solid State |
1924 |
2N5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
1925 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
1926 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
1927 |
2N5189 |
High-Voltage Silicon NPN Switching Transistor |
RCA Solid State |
1928 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
1929 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1930 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1931 |
2N5239 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
1932 |
2N5240 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
1933 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1934 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1935 |
2N5262 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
1936 |
2N5294 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
1937 |
2N5296 |
Silicon N-P-N transistor. 60V, 36W. |
General Electric Solid State |
1938 |
2N5298 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
1939 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
1940 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
1941 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
1942 |
2N5305 |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
1943 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
1944 |
2N5306A |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
1945 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
1946 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
1947 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
1948 |
2N5320 |
General purpose N-P-N silicon power transistor. |
General Electric Solid State |
1949 |
2N5321 |
General purpose N-P-N silicon power transistor. |
General Electric Solid State |
1950 |
2N5322 |
General purpose P-N-P silicon power transistor. |
General Electric Solid State |
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