DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SOL

Datasheets found :: 19264
Page: | 66 | 67 | 68 | 69 | 70 | 71 | 72 | 73 | 74 |
No. Part Name Description Manufacturer
2071 2N6250 375V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
2072 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
2073 2N6253 High-power silicon N-P-N transistor. 55V, 115W. General Electric Solid State
2074 2N6254 High-power silicon N-P-N transistor. 100V, 150W. General Electric Solid State
2075 2N6259 High voltage, high power transistor. 170V, 250W. General Electric Solid State
2076 2N6262 High voltage silicon N-P-N transistor. 170V, 150W. General Electric Solid State
2077 2N6263 Medium power silicon N-P-N transistor. 140V, 20W. General Electric Solid State
2078 2N6264 Medium power silicon N-P-N transistor. 170V, 50W. General Electric Solid State
2079 2N6265 2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
2080 2N6266 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
2081 2N6266 5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor RCA Solid State
2082 2N6267 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
2083 2N6267 10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
2084 2N6268 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
2085 2N6269 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
2086 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
2087 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
2088 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
2089 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
2090 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
2091 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
2092 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
2093 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
2094 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
2095 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
2096 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
2097 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
2098 2N6342A 12-A silicon triac. 200 V. General Electric Solid State
2099 2N6343A 12-A silicon triac. 400 V. General Electric Solid State
2100 2N6344A 12-A silicon triac. 600 V. General Electric Solid State


Datasheets found :: 19264
Page: | 66 | 67 | 68 | 69 | 70 | 71 | 72 | 73 | 74 |



© 2024 - www Datasheet Catalog com