No. |
Part Name |
Description |
Manufacturer |
1831 |
FX605 |
Ultrahigh-Speed Switching Applications |
SANYO |
1832 |
FX606 |
Ultrahigh-Speed Switching Applications |
SANYO |
1833 |
GCA150AA120 |
High speed, high current switching applications. |
etc |
1834 |
GCA75AA120 |
High speed, high current switching applications. |
etc |
1835 |
GD120 |
Germanium PNP power transistor for power amplifiers and switching applications up to 30V in the low frequency range |
RFT |
1836 |
GD130 |
Germanium PNP power transistor for switching applications upt to 60V in the low frequency range |
RFT |
1837 |
GMA01 |
Very High-Speed Switching, Bias Stabilizing Applications |
SANYO |
1838 |
GMA01U |
Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications |
SANYO |
1839 |
GSA400AA120 |
High speed, high current switching applications. |
SanRex |
1840 |
GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
1841 |
GT10J303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
1842 |
GT10J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
1843 |
GT10J312 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
1844 |
GT10J312(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
1845 |
GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
1846 |
GT10Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
1847 |
GT15J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
1848 |
GT15J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
1849 |
GT15J103(SM) |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
1850 |
GT15J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
1851 |
GT15J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
1852 |
GT15J311(SM) |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
1853 |
GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
1854 |
GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
1855 |
GT15J331 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
1856 |
GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
1857 |
GT15Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
1858 |
GT15Q102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
1859 |
GT15Q301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
1860 |
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
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