| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1952 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1953 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1954 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 1955 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 1956 |
HN2V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 1957 |
HN4B101J |
Power transistor for high-speed switching applications |
TOSHIBA |
| 1958 |
HN4B102J |
Power transistor for high-speed switching applications |
TOSHIBA |
| 1959 |
HN4C05JU |
Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 1960 |
HN4K03JU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 1961 |
IGB15N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 1962 |
IGB50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 1963 |
IGP30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 1964 |
IGP50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 1965 |
IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 1966 |
IGW50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 1967 |
IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 1968 |
IR2114 |
600V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
| 1969 |
IR21141 |
600V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
| 1970 |
IR21141SSTRPBF |
600V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
| 1971 |
IR2114SSTRPBF |
600V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
| 1972 |
IR2214 |
Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
| 1973 |
IR22141SS |
Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package. |
International Rectifier |
| 1974 |
IR22141SSTRPBF |
1200V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
| 1975 |
IR2214SS |
Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
| 1976 |
IR2214SSTRPBF |
1200V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
| 1977 |
IR3638S |
High Frequency Synchronous PWM Controller for Tracking Applications. |
International Rectifier |
| 1978 |
IR3638STRPBF |
High Frequency Synchronous PWM Controller for Tracking Applications. |
International Rectifier |
| 1979 |
IRDC3138 |
Reference Design Kit Featuring a Low Cost Synchronous Buck Regulator for Voltage Tracking Applications |
International Rectifier |
| 1980 |
IRF640NSTR |
N-channel power MOSFET for fast switching applications, 200V, 18A |
International Rectifier |
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