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Datasheets for G AP

Datasheets found :: 2873
Page: | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 | 69 |
No. Part Name Description Manufacturer
1921 GT60M302 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA
1922 GT60M303 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA
1923 GT60M324 IGBT for soft switching applications TOSHIBA
1924 GT60N321 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation TOSHIBA
1925 GT60PR21 IGBT for soft switching applications TOSHIBA
1926 GT80J101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS TOSHIBA
1927 GT80J101A Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications TOSHIBA
1928 GT8J101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
1929 GT8J102(SM) INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
1930 GT8Q101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
1931 GT8Q102(SM) INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA
1932 HIGH Q DIELECTRIC MLCC Multilayer Ceramic Chip Capacitors, High Q at High Frequencies, Low ESR, Ultra-Stable C0G Dielectric, Low Dissipation Factor, Ideal for Critical Timing and Tuning Applications Vishay
1933 HN1C03F Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications TOSHIBA
1934 HN1C03FU Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications TOSHIBA
1935 HN1D01F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1936 HN1D01FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1937 HN1D02F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1938 HN1D02FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1939 HN1D03F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1940 HN1D03FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1941 HN1J02FU Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1942 HN1K02FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1943 HN1K03FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1944 HN1K04FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1945 HN1K05FU Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA
1946 HN1K06FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1947 HN1L02FU Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1948 HN1L03FU Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1949 HN1V01H Variable Capacitance Diode AM Radio Band Tuning Applications TOSHIBA
1950 HN1V02H Variable Capacitance Diode AM Radio Band Tuning Applications TOSHIBA


Datasheets found :: 2873
Page: | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 | 69 |



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