| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
IRG7PH35UD1M |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode For Induction Heating and Soft Switching Applications |
International Rectifier |
| 1982 |
IRG7PH35UD1MPBF |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode For Induction Heating and Soft Switching Applications |
International Rectifier |
| 1983 |
IRGP4068D |
600V UltraFast Copack Trench IGBT in a TO-247 package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps |
International Rectifier |
| 1984 |
IRGP4068D-EPBF |
600V UltraFast Copack Trench IGBT in a TO-247 package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps |
International Rectifier |
| 1985 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 1986 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 1987 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 1988 |
JDV2S07FS |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 1989 |
JDV2S09FS |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 1990 |
JDV2S10FS |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 1991 |
JDV2S36E |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 1992 |
JDV2S41FS |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 1993 |
JDV3C11 |
Diode Silicon Epitaxial Planar Type Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 1994 |
K142 |
Very High-Speed Switching Applications |
SANYO |
| 1995 |
K246 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 1996 |
K246 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 1997 |
KDV1430A |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 1998 |
KDV1430B |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 1999 |
KDV1430C |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 2000 |
KDV1430D |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 2001 |
KDV147A |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 2002 |
KDV147B |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 2003 |
KDV147C |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 2004 |
KDV147D |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 2005 |
KDV147E |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 2006 |
KDV149A |
Silicon diode for AM radio band tuning applications |
Korea Electronics (KEC) |
| 2007 |
KDV149B |
Silicon diode for AM radio band tuning applications |
Korea Electronics (KEC) |
| 2008 |
KDV149C |
Silicon diode for AM radio band tuning applications |
Korea Electronics (KEC) |
| 2009 |
KDV149D |
Silicon diode for AM radio band tuning applications |
Korea Electronics (KEC) |
| 2010 |
KSA910 |
PNP (DRIVER STAGE AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS) |
Samsung Electronic |
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