| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1892 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1893 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1894 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1895 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 1896 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 1897 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
| 1898 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 1899 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1900 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1901 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1902 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1903 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1904 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1905 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1906 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1907 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1908 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1909 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1910 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1911 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 1912 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1913 |
2N650 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1914 |
2N650A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1915 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1916 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1917 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1918 |
2N652A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1919 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 1920 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
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