| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1922 |
2N697 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1923 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 1924 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 1925 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 1926 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 1927 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 1928 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1929 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1930 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1931 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1932 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1933 |
2N707 |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 1934 |
2N707A |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 1935 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1936 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 1937 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 1938 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 1939 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1940 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1941 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1942 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 1943 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1944 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 1945 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
| 1946 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 1947 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 1948 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 1949 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1950 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
| | | |
