No. |
Part Name |
Description |
Manufacturer |
1951 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1952 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1953 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1954 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
1955 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
1956 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1957 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
1958 |
2N914 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
1959 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
1960 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
1961 |
2N918ACSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
1962 |
2N918CSM |
GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1963 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
1964 |
2N929 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
1965 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
1966 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
1967 |
2N930 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
1968 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
1969 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1970 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
1971 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
1972 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
1973 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
1974 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1975 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
1976 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1977 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
1978 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
1979 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
1980 |
2N968 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
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