| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
1N5226AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-10%. |
Microsemi |
| 1892 |
1N5226B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1893 |
1N5226B |
500 milliwatts glass silicon zener diode, zener voltage 3.3V |
Motorola |
| 1894 |
1N5226BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-5%. |
Microsemi |
| 1895 |
1N5226UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. |
Microsemi |
| 1896 |
1N5227 |
500mW, 3.6 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1897 |
1N5227AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-10%. |
Microsemi |
| 1898 |
1N5227B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1899 |
1N5227B |
500 milliwatts glass silicon zener diode, zener voltage 3.6V |
Motorola |
| 1900 |
1N5227BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-5%. |
Microsemi |
| 1901 |
1N5227UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. |
Microsemi |
| 1902 |
1N5228 |
500mW, 3.9 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1903 |
1N5228AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. Tolerance +-10%. |
Microsemi |
| 1904 |
1N5228B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1905 |
1N5228B |
500 milliwatts glass silicon zener diode, zener voltage 3.9V |
Motorola |
| 1906 |
1N5228BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. Tolerance +-5%. |
Microsemi |
| 1907 |
1N5228UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. |
Microsemi |
| 1908 |
1N5229 |
500mW, 4.3 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1909 |
1N5229AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. Tolerance +-10%. |
Microsemi |
| 1910 |
1N5229B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1911 |
1N5229B |
500 milliwatts glass silicon zener diode, zener voltage 4.3V |
Motorola |
| 1912 |
1N5229BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. Tolerance +-5%. |
Microsemi |
| 1913 |
1N5229UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. |
Microsemi |
| 1914 |
1N5230 |
500mW, 4.7 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1915 |
1N5230AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.7 V. Tolerance +-10%. |
Microsemi |
| 1916 |
1N5230B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1917 |
1N5230B |
500 milliwatts glass silicon zener diode, zener voltage 4.7V |
Motorola |
| 1918 |
1N5230BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.7 V. Tolerance +-5%. |
Microsemi |
| 1919 |
1N5230UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.7 V. |
Microsemi |
| 1920 |
1N5231 |
500mW, 5.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
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