| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
1N5236AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. Tolerance +-10%. |
Microsemi |
| 1952 |
1N5236B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1953 |
1N5236B |
500 milliwatts glass silicon zener diode, zener voltage 7.5V |
Motorola |
| 1954 |
1N5236BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. Tolerance +-5%. |
Microsemi |
| 1955 |
1N5236UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. |
Microsemi |
| 1956 |
1N5237 |
500mW, 8.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1957 |
1N5237AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. Tolerance +-10%. |
Microsemi |
| 1958 |
1N5237B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1959 |
1N5237B |
500 milliwatts glass silicon zener diode, zener voltage 8.2V |
Motorola |
| 1960 |
1N5237BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. Tolerance +-5%. |
Microsemi |
| 1961 |
1N5237UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. |
Microsemi |
| 1962 |
1N5238 |
500mW, 8.7 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1963 |
1N5238AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.7 V. Tolerance +-10%. |
Microsemi |
| 1964 |
1N5238B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1965 |
1N5238B |
500 milliwatts glass silicon zener diode, zener voltage 8.7V |
Motorola |
| 1966 |
1N5238BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.7 V. Tolerance +-5%. |
Microsemi |
| 1967 |
1N5238UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.7 V. |
Microsemi |
| 1968 |
1N5239 |
500mW, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1969 |
1N5239AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-10%. |
Microsemi |
| 1970 |
1N5239B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1971 |
1N5239B |
500 milliwatts glass silicon zener diode, zener voltage 9.1V |
Motorola |
| 1972 |
1N5239BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-5%. |
Microsemi |
| 1973 |
1N5239UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. |
Microsemi |
| 1974 |
1N5240 |
500mW, 10 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1975 |
1N5240AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 10 V. Tolerance +-10%. |
Microsemi |
| 1976 |
1N5240B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1977 |
1N5240B |
500 milliwatts glass silicon zener diode, zener voltage 10V |
Motorola |
| 1978 |
1N5240BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 10 V. Tolerance +-5%. |
Microsemi |
| 1979 |
1N5240UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 10 V. |
Microsemi |
| 1980 |
1N5241 |
500mW, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
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