| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
1N5231AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. Tolerance +-10%. |
Microsemi |
| 1922 |
1N5231B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1923 |
1N5231B |
500 milliwatts glass silicon zener diode, zener voltage 5.1V |
Motorola |
| 1924 |
1N5231BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. Tolerance +-5%. |
Microsemi |
| 1925 |
1N5231UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. |
Microsemi |
| 1926 |
1N5232 |
500mW, 5.6 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1927 |
1N5232AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. Tolerance +-10%. |
Microsemi |
| 1928 |
1N5232B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1929 |
1N5232B |
500 milliwatts glass silicon zener diode, zener voltage 5.6V |
Motorola |
| 1930 |
1N5232BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. Tolerance +-5%. |
Microsemi |
| 1931 |
1N5232UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. |
Microsemi |
| 1932 |
1N5233 |
500mW, 6.0 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1933 |
1N5233AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.0 V. Tolerance +-10%. |
Microsemi |
| 1934 |
1N5233B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1935 |
1N5233B |
500 milliwatts glass silicon zener diode, zener voltage 6V |
Motorola |
| 1936 |
1N5233BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.0 V. Tolerance +-5%. |
Microsemi |
| 1937 |
1N5233UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.0 V. |
Microsemi |
| 1938 |
1N5234 |
500mW, 6.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1939 |
1N5234AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.2 V. Tolerance +-10%. |
Microsemi |
| 1940 |
1N5234B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1941 |
1N5234B |
500 milliwatts glass silicon zener diode, zener voltage 6.2V |
Motorola |
| 1942 |
1N5234BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.2 V. Tolerance +-5%. |
Microsemi |
| 1943 |
1N5234UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.2 V. |
Microsemi |
| 1944 |
1N5235 |
500mW, 6.8 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 1945 |
1N5235AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.8 V. Tolerance +-10%. |
Microsemi |
| 1946 |
1N5235B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
| 1947 |
1N5235B |
500 milliwatts glass silicon zener diode, zener voltage 6.8V |
Motorola |
| 1948 |
1N5235BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.8 V. Tolerance +-5%. |
Microsemi |
| 1949 |
1N5235UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.8 V. |
Microsemi |
| 1950 |
1N5236 |
500mW, 7.5 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
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