| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 1892 |
2N6253 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 1893 |
2N6254 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1894 |
2N6257 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1895 |
2N6258 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 1896 |
2N6259 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 1897 |
2N6261 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1898 |
2N6262 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1899 |
2N6263 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1900 |
2N6264 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1901 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 1902 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1903 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1904 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1905 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1906 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1907 |
2N6371 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1908 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
| 1909 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1910 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1911 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1912 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 1913 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 1914 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 1915 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 1916 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 1917 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1918 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1919 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1920 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
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