| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 1952 |
2N718 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1953 |
2N718A |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1954 |
2N718A |
0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 1955 |
2N718A |
NPN Small Signal General Purpose Amplifiers |
Fairchild Semiconductor |
| 1956 |
2N718A |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1957 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 1958 |
2N722 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 1959 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 1960 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 1961 |
2N915 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1962 |
2N916 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1963 |
2N929 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 1964 |
2N929 |
Silicon General Purpose Transistor |
ITT Semiconductors |
| 1965 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 1966 |
2N930 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 1967 |
2N930 |
Silicon General Purpose Transistor |
ITT Semiconductors |
| 1968 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 1969 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1970 |
2N956 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1971 |
2N956 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1972 |
2PA1015 |
PNP general purpose transistor |
Philips |
| 1973 |
2PA1015GR |
PNP general purpose transistor |
Philips |
| 1974 |
2PA1015Y |
PNP general purpose transistor |
Philips |
| 1975 |
2PA1576 |
PNP general purpose transistor |
Philips |
| 1976 |
2PA1576Q |
PNP general-purpose transistor |
Nexperia |
| 1977 |
2PA1576Q |
PNP general-purpose transistor |
NXP Semiconductors |
| 1978 |
2PA1576Q |
PNP general purpose transistor |
Philips |
| 1979 |
2PA1576R |
PNP general-purpose transistor |
Nexperia |
| 1980 |
2PA1576R |
PNP general-purpose transistor |
NXP Semiconductors |
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