No. |
Part Name |
Description |
Manufacturer |
1921 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1922 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1923 |
2N6705 |
0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
1924 |
2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
1925 |
2N6708 |
0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
1926 |
2N6709 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
1927 |
2N6710 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
1928 |
2N6714 |
0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
1929 |
2N6715 |
0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE |
Continental Device India Limited |
1930 |
2N6716 |
0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE |
Continental Device India Limited |
1931 |
2N6717 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
1932 |
2N6718 |
0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
1933 |
2N6719 |
0.850W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 - hFE |
Continental Device India Limited |
1934 |
2N6726 |
0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE |
Continental Device India Limited |
1935 |
2N6727 |
0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
1936 |
2N6728 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
1937 |
2N6729 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
1938 |
2N6730 |
0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
1939 |
2N696 |
General purpose NPN transistor |
FERRANTI |
1940 |
2N696 |
General purpose NPN silicon planar epitaxial transistor |
ITT Semiconductors |
1941 |
2N696 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
1942 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
1943 |
2N697 |
General purpose NPN transistor |
FERRANTI |
1944 |
2N697 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
1945 |
2N697 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
1946 |
2N698 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
1947 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
1948 |
2N699 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
1949 |
2N706 |
General purpose NPN transistor |
FERRANTI |
1950 |
2N706A |
General purpose NPN transistor |
FERRANTI |
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