| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1922 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1923 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1924 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1925 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1926 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1927 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1928 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1929 |
2N985 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1930 |
2SA0564 |
Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1931 |
2SA0564A |
Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1932 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1933 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 1934 |
2SA0748 |
Power Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1935 |
2SA1006 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1936 |
2SA1006A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1937 |
2SA1006B |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1938 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1939 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1940 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1941 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1942 |
2SA1013 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 1943 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 1944 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 1945 |
2SA1017 |
PNP/NPN EPITAXIAL PLANAR TYPE SILICON TRANSISTOR |
Unknow |
| 1946 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
| 1947 |
2SA1020 |
PNP EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 1948 |
2SA1021 |
Silicon PNP epitaxial transistor |
TOSHIBA |
| 1949 |
2SA1037K |
EPITAXIAL PLANAR SUPER / ULTRA MINI MOLD PNP SILICON TRANSISTORS |
ROHM |
| 1950 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
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