No. |
Part Name |
Description |
Manufacturer |
2011 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2012 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2013 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2014 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2015 |
2SA1293 |
TRANSISTOR SILICON PNP PITAXIAL TYPE (PCT PROCESS) High Current Switching Applications |
TOSHIBA |
2016 |
2SA1294 |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
Sanken |
2017 |
2SA1295 |
Silicon PNP Epitaxial Planar Transistor(Audio and General) |
Sanken |
2018 |
2SA1296 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2019 |
2SA1297 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2020 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
2021 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
2022 |
2SA1303 |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
Sanken |
2023 |
2SA1305 |
Silicon PNP epitaxial power transistor |
TOSHIBA |
2024 |
2SA1306 |
Silicon PNP epitaxial power transistor |
TOSHIBA |
2025 |
2SA1306A |
Silicon PNP epitaxial power transistor |
TOSHIBA |
2026 |
2SA1306B |
Silicon PNP epitaxial power transistor |
TOSHIBA |
2027 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
2028 |
2SA1307 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
2029 |
2SA1307 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
2030 |
2SA1308 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
2031 |
2SA1309 |
Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
2032 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
2033 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
2034 |
2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications |
TOSHIBA |
2035 |
2SA1315 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2036 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
2037 |
2SA1317 |
PNP/NPN Epitaxial Planar Silicon Transistors |
SANYO |
2038 |
2SA1322 |
Silicon PNP epitaxial high voltage switching transistor |
TOSHIBA |
2039 |
2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications |
TOSHIBA |
2040 |
2SA1328 |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
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