| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
| 1952 |
2SA1049 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 1953 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 1954 |
2SA1064 |
SI NPN EPITAXIAL MESA |
Panasonic |
| 1955 |
2SA1065 |
SI NPN EPITAXIAL MESA |
Panasonic |
| 1956 |
2SA1090 |
Silicon PNP epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 1957 |
2SA1093 |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
| 1958 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 1959 |
2SA1094 |
SILICON PNP EPITAXIAL TRANSISTOR |
Unknow |
| 1960 |
2SA1095 |
Silicon PNP Epitaxial Type (PCT Process) |
TOSHIBA |
| 1961 |
2SA1104 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 1962 |
2SA1110 |
SI PNP EPITAXIAL PLANAR |
Panasonic |
| 1963 |
2SA1111 |
Power Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1964 |
2SA1112 |
Power Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1965 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
| 1966 |
2SA1125 |
Si PNP epitaxial planar. AF high voltage amplifier. |
Panasonic |
| 1967 |
2SA1144 |
Silicon PNP epitaxial audio frequency transistor |
TOSHIBA |
| 1968 |
2SA1145 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1969 |
2SA1146 |
Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications |
TOSHIBA |
| 1970 |
2SA1150 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Frequency Amplifier Applications |
TOSHIBA |
| 1971 |
2SA1158 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 1972 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1973 |
2SA1162 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1974 |
2SA1163 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1975 |
2SA1164 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 1976 |
2SA1173 |
PNP silicon epitaxial transistor power MINI MOLD |
NEC |
| 1977 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 1978 |
2SA1184 |
Silicon PNP epitaxial audio frequency power transistor |
TOSHIBA |
| 1979 |
2SA1186 |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
Sanken |
| 1980 |
2SA1195 |
Silicon PNP epitaxial high voltage transistor |
TOSHIBA |
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