| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
1N5404RL |
3A 400V Standard Recovery Rectifier |
ON Semiconductor |
| 1952 |
1N5418 |
Rectifier Diode 400V |
Motorola |
| 1953 |
1N5418 |
Diode Switching 400V 3A 2-Pin Case E |
New Jersey Semiconductor |
| 1954 |
1N5418 |
400 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 1955 |
1N5420 |
600 V rectifier 5.0 A forward current, 400 ns recovery time |
Voltage Multipliers |
| 1956 |
1N547 |
Diode Switching 400V 3A 2-Pin SOD-64 Ammo |
New Jersey Semiconductor |
| 1957 |
1N550 |
Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1958 |
1N551 |
Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1959 |
1N5518 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±20% tolerance |
Motorola |
| 1960 |
1N5518 |
Diode Zener Single 3.3V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1961 |
1N5518A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±10% tolerance |
Motorola |
| 1962 |
1N5518A |
Diode Zener Single 3.3V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1963 |
1N5518B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±5% tolerance |
Motorola |
| 1964 |
1N5518B |
Diode Zener Single 3.3V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1965 |
1N5518C |
Diode Zener Single 3.3V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1966 |
1N5518D |
Diode Zener Single 3.3V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1967 |
1N5519 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±20% tolerance |
Motorola |
| 1968 |
1N5519 |
Diode Zener Single 3.6V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1969 |
1N5519A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±10% tolerance |
Motorola |
| 1970 |
1N5519A |
Diode Zener Single 3.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1971 |
1N5519B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±5% tolerance |
Motorola |
| 1972 |
1N5519B |
Diode Zener Single 3.6V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1973 |
1N5519C |
Diode Zener Single 3.6V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1974 |
1N5519D |
Diode Zener Single 3.6V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1975 |
1N5520 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.9V ±20% tolerance |
Motorola |
| 1976 |
1N5520 |
Diode Zener Single 3.9V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1977 |
1N5520A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.9V ±10% tolerance |
Motorola |
| 1978 |
1N5520A |
Diode Zener Single 3.9V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1979 |
1N5520B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.9V ±5% tolerance |
Motorola |
| 1980 |
1N5520B |
Diode Zener Single 3.9V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
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