| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
1N5524B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±5% tolerance |
Motorola |
| 2012 |
1N5524B |
Diode Zener Single 5.6V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2013 |
1N5524C |
Diode Zener Single 5.6V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2014 |
1N5524D |
Diode Zener Single 5.6V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2015 |
1N5525 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.2V ±20% tolerance |
Motorola |
| 2016 |
1N5525 |
Diode Zener Single 6.2V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2017 |
1N5525A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.2V ±10% tolerance |
Motorola |
| 2018 |
1N5525A |
Diode Zener Single 6.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2019 |
1N5525B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.2V ±5% tolerance |
Motorola |
| 2020 |
1N5525B |
Diode Zener Single 6.2V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2021 |
1N5525C |
Diode Zener Single 6.2V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2022 |
1N5525D |
Diode Zener Single 6.2V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2023 |
1N5526 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.8V ±20% tolerance |
Motorola |
| 2024 |
1N5526 |
Diode Zener Single 6.8V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2025 |
1N5526A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.8V ±10% tolerance |
Motorola |
| 2026 |
1N5526A |
Diode Zener Single 6.8V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2027 |
1N5526B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.8V ±5% tolerance |
Motorola |
| 2028 |
1N5526B |
Diode Zener Single 6.8V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2029 |
1N5526C |
Diode Zener Single 6.8V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2030 |
1N5526D |
Diode Zener Single 6.8V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2031 |
1N5527 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±20% tolerance |
Motorola |
| 2032 |
1N5527 |
Diode Zener Single 7.5V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2033 |
1N5527A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±10% tolerance |
Motorola |
| 2034 |
1N5527A |
Diode Zener Single 7.5V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2035 |
1N5527B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±5% tolerance |
Motorola |
| 2036 |
1N5527B |
Diode Zener Single 7.5V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2037 |
1N5527C |
Diode Zener Single 7.5V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2038 |
1N5527D |
Diode Zener Single 7.5V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2039 |
1N5528 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 8.2V ±20% tolerance |
Motorola |
| 2040 |
1N5528 |
Diode Zener Single 8.2V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
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