| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
1N5520C |
Diode Zener Single 3.9V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1982 |
1N5520D |
Diode Zener Single 3.9V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1983 |
1N5521 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±20% tolerance |
Motorola |
| 1984 |
1N5521 |
Diode Zener Single 4.3V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1985 |
1N5521A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±10% tolerance |
Motorola |
| 1986 |
1N5521A |
Diode Zener Single 4.3V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1987 |
1N5521B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.3V ±5% tolerance |
Motorola |
| 1988 |
1N5521B |
Diode Zener Single 4.3V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1989 |
1N5521C |
Diode Zener Single 4.3V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1990 |
1N5521D |
Diode Zener Single 4.3V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1991 |
1N5522 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.7V ±20% tolerance |
Motorola |
| 1992 |
1N5522 |
Diode Zener Single 4.7V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1993 |
1N5522A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.7V ±10% tolerance |
Motorola |
| 1994 |
1N5522A |
Diode Zener Single 4.7V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1995 |
1N5522B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 4.7V ±5% tolerance |
Motorola |
| 1996 |
1N5522B |
Diode Zener Single 4.7V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1997 |
1N5522C |
Diode Zener Single 4.7V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1998 |
1N5522D |
Diode Zener Single 4.7V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 1999 |
1N5523 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.1V ±20% tolerance |
Motorola |
| 2000 |
1N5523 |
Diode Zener Single 5.1V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2001 |
1N5523A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.1V ±10% tolerance |
Motorola |
| 2002 |
1N5523A |
Diode Zener Single 5.1V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2003 |
1N5523B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.1V ±5% tolerance |
Motorola |
| 2004 |
1N5523B |
Diode Zener Single 5.1V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2005 |
1N5523C |
Diode Zener Single 5.1V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2006 |
1N5523D |
Diode Zener Single 5.1V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2007 |
1N5524 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±20% tolerance |
Motorola |
| 2008 |
1N5524 |
Diode Zener Single 5.6V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 2009 |
1N5524A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±10% tolerance |
Motorola |
| 2010 |
1N5524A |
Diode Zener Single 5.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
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