| No. |
Part Name |
Description |
Manufacturer |
| 2071 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 2072 |
2N5109 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2073 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 2074 |
2N5109A |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2075 |
2N5109B |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2076 |
2N5160 |
PNP silicon RF power transistor for military and industrial equipment |
Motorola |
| 2077 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 2078 |
2N5162 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 2079 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 2080 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 2081 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2082 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2083 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2084 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2085 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2086 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2087 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 2088 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 2089 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 2090 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2091 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
| 2092 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2093 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2094 |
2N5338 |
Planar transistor for switching applications |
SGS-ATES |
| 2095 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2096 |
2N5339 |
Planar transistor for switching applications |
SGS-ATES |
| 2097 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2098 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2099 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2100 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
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