| No. |
Part Name |
Description |
Manufacturer |
| 2101 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
| 2102 |
2N5447 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 2103 |
2N5448 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 2104 |
2N5449 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 2105 |
2N5450 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 2106 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 2107 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 2108 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 2109 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 2110 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 2111 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2112 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2113 |
2N5589 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2114 |
2N5590 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2115 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
| 2116 |
2N5591 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2117 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2118 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2119 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
| 2120 |
2N5829 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 2121 |
2N5835 |
RF NPN transistor for UHF amplifier |
IPRS Baneasa |
| 2122 |
2N5836 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2123 |
2N5837 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2124 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2125 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2126 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2127 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2128 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
| 2129 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
| 2130 |
2N5945 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
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