| No. |
Part Name |
Description |
Manufacturer |
| 2131 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2132 |
2N5946 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 2133 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2134 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
| 2135 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2136 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2137 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2138 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2139 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2140 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2141 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2142 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2143 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2144 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2145 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2146 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2147 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2148 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2149 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2150 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2151 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2152 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2153 |
2N6080 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2154 |
2N6081 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
| 2155 |
2N6081 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2156 |
2N6082 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2157 |
2N6083 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2158 |
2N6084 |
12.5V 40W RF NPN transistor for VHF FM mobile applications |
SGS Thomson Microelectronics |
| 2159 |
2N6084 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2160 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| | | |
